含氧空位M-BaxSr1-xTiO3-M薄膜结构的I-V特性第2部分

Image Journal of Advanced Materials and Technologies Pub Date : 2020-01-01 DOI:10.17277/amt.2020.04.pp.058-066

V. Buniatyan, H. Dashtoyan, A. Davtyan

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引用次数: 0

摘要

在论文的第二部分中，基于第一部分的结果和假设，导出了Schottky势垒热场辅助和Poole-Frenkel发射电流的解析表达式。将计算机模拟的I-V特性的理论依赖关系与实验测量结果进行了比较，得到了较好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The I–V Characteristics of M–BaxSr1–xTiO3–M Thin Film Structures with Oxygen Vacancies. Part 2

In Part 2 of the paper, based on the results and assumptions pointed in Part 1, analytical expressions were derived for Schottky barrier thermal/field assisted and Poole-Frenkel emission currents. The computer modeling theoretical dependencies of the I–V characteristics has been compared with the experimental measured results and obtained good agreements.

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Image Journal of Advanced Materials and Technologies

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