芯片级Rb等离子体放电光源的优化:射频驱动频率和电池阻抗的影响

V. Venkatraman, H. Shea, Y. Petremand, N. D. de Rooij, C. Affolderbach, G. Mileti
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引用次数: 3

摘要

我们报告了我们之前演示的概念验证芯片级介质阻挡放电(DBD) Rb灯[1]的性能改进,(1)通过改变射频驱动频率改变等离子体工作状态,(2)改进电极设计,用于芯片级双共振(DR)原子钟的光泵浦。我们实现的微制造平面DBD Rb灯现在有外部沉积的Al电极,允许有效的功率耦合到放电体积,并在不同的射频驱动频率下进行了测试,范围从2 MHz到500 MHz。目前,该光源可以根据输入条件在Rb D2线上发射高达380µW的光功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of a chip-scale Rb plasma discharge light source: Effects of RF drive frequency and cell impedance
We report on the performance improvements achieved on our previously demonstrated proof-of-concept chip-scale dielectric barrier discharge (DBD) Rb lamp [1], (1) with change in the plasma regime of operation by changing RF drive frequency and (2) with an improved electrode design, for optical pumping in a chip-scale Double-Resonance (DR) atomic clock. Our realized microfabricated planar DBD Rb lamp now has externally deposited Al electrodes, allowing for efficient power coupling to the discharge volume and was tested at different RF drive frequencies ranging from 2 MHz to 500 MHz. Currently the light source can emit up to 380 µW of optical power on the Rb D2 line depending on input conditions.
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