P3HT:PCBM有机太阳能电池电学特性研究

Yang Shen, Mool C. Gupta
{"title":"P3HT:PCBM有机太阳能电池电学特性研究","authors":"Yang Shen, Mool C. Gupta","doi":"10.1109/PVSC.2012.6318167","DOIUrl":null,"url":null,"abstract":"Capacitance of P3HT(poly (3-hexylthiophene-2,5-diyl)):PCBM ([6,6]-phenyl C61-butyric acid methyl ester) bulk heterojunction solar cell was measured at different biases and different temperatures (25°C and 130°C). The capacitance was found to vary with bias voltages, and showed different trends with temperature, but the peak capacitance values and positions did not vary much. Mott-Schottky relation was used to model the behavior of capacitance in reverse bias. The capacitance of pure P3HT showed a different trend as compare to the P3HT:PCBM blend. The peak position did not vary, but the peak values decrease with temperature. Permittivity of P3HT was then calculated and the temperature dependence of exciton binding energy was revealed. The active layer thickness effect on the series resistance was also examined. The results show two regions, the slope quickly changes after certain thickness. Further investigation of electrical prosperities will provide insight on the origin of open circuit voltage and charge transport mechanism.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"002770-002774"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Investigation of electrical characteristics of P3HT:PCBM organic solar cells\",\"authors\":\"Yang Shen, Mool C. Gupta\",\"doi\":\"10.1109/PVSC.2012.6318167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Capacitance of P3HT(poly (3-hexylthiophene-2,5-diyl)):PCBM ([6,6]-phenyl C61-butyric acid methyl ester) bulk heterojunction solar cell was measured at different biases and different temperatures (25°C and 130°C). The capacitance was found to vary with bias voltages, and showed different trends with temperature, but the peak capacitance values and positions did not vary much. Mott-Schottky relation was used to model the behavior of capacitance in reverse bias. The capacitance of pure P3HT showed a different trend as compare to the P3HT:PCBM blend. The peak position did not vary, but the peak values decrease with temperature. Permittivity of P3HT was then calculated and the temperature dependence of exciton binding energy was revealed. The active layer thickness effect on the series resistance was also examined. The results show two regions, the slope quickly changes after certain thickness. Further investigation of electrical prosperities will provide insight on the origin of open circuit voltage and charge transport mechanism.\",\"PeriodicalId\":6318,\"journal\":{\"name\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"volume\":\"1 1\",\"pages\":\"002770-002774\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2012.6318167\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2012.6318167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

测定了P3HT(聚(3-己基噻吩-2,5-二基)):PCBM([6,6]-苯基c61 -丁酸甲酯)体异质结太阳能电池在不同偏置和不同温度(25℃和130℃)下的电容。电容值随偏置电压变化,随温度变化趋势不同,但峰值电容值和位置变化不大。采用Mott-Schottky关系来模拟电容在反向偏置下的行为。纯P3HT的电容量与P3HT:PCBM共混物的电容量变化趋势不同。峰的位置没有变化,但峰值随温度的升高而减小。计算了P3HT的介电常数,揭示了激子结合能的温度依赖性。研究了有源层厚度对串联电阻的影响。结果表明:在一定厚度后,坡面发生快速变化;对电繁荣的进一步研究将有助于深入了解开路电压的起源和电荷传输机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of electrical characteristics of P3HT:PCBM organic solar cells
Capacitance of P3HT(poly (3-hexylthiophene-2,5-diyl)):PCBM ([6,6]-phenyl C61-butyric acid methyl ester) bulk heterojunction solar cell was measured at different biases and different temperatures (25°C and 130°C). The capacitance was found to vary with bias voltages, and showed different trends with temperature, but the peak capacitance values and positions did not vary much. Mott-Schottky relation was used to model the behavior of capacitance in reverse bias. The capacitance of pure P3HT showed a different trend as compare to the P3HT:PCBM blend. The peak position did not vary, but the peak values decrease with temperature. Permittivity of P3HT was then calculated and the temperature dependence of exciton binding energy was revealed. The active layer thickness effect on the series resistance was also examined. The results show two regions, the slope quickly changes after certain thickness. Further investigation of electrical prosperities will provide insight on the origin of open circuit voltage and charge transport mechanism.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信