高隔离射频MEMS开关的低成本制造和测试

2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1) Pub Date : 2012-03-07 DOI:10.1109/ISPTS.2012.6260917

A. Joshi, S. Gangal, R. Gandhi, K. Natarajan, D. Bodas

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引用次数: 0

摘要

射频MEMS开关是低功耗通信系统的关键部件。本论文报道了基于MEMS的驱动电压在30-50V范围内的串联和并联开关的制造。着眼于低成本的制造方法，选择铝作为制造输电线路和结构梁的成本效益替代方案。该开关设计具有更高的隔离度>25dB和低插入损耗<0.5dB。对1 ~ 20ghz频率范围内的并联开关和串联开关进行了研究。并联开关的插入损耗为0.5db，隔离度为−28dB @ 20GHz;串联开关的插入损耗为0.7db，隔离度为−27dB @ 20GHz。测量的驱动电压为并联开关30V，串联开关42V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low cost fabrication and testing of high isolation RF MEMS switches

RF MEMS switches are key components in lowpower communication system. The present paper reports fabrication of MEMS based series and shunt switches for actuation voltage in the range of 30–50V. Focusing on low cost fabrication approach, Aluminum was chosen as a cost effective alternative for fabrication of transmission line and structural beam. The switches were designed for higher isolation of >25dB and low insertion loss of <0.5dB. The shunt and series switches were investigated for the frequency range of 1–20 GHz. The shunt switch shows an insertion loss of 0.5db and isolation of −28dB @ 20GHz and the series switch shows an insertion loss of 0.7db and isolation of −27dB @ 20GHz. The measured actuation voltage was 30V for shunt switch and 42V for series switch.

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2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)

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