高效(Ag,Cu)(in,Ga)Se2中缺陷的光学表征

Siming Li, R. Farshchi, Michael F. Miller, A. Arehart, D. Kuciauskas
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引用次数: 0

摘要

利用时间分辨光致发光(TRPL)技术对优化后的黄铜矿(Ag,Cu)(In,Ga)Se2薄膜进行了研究。该器件的功率转换效率为18.7%。在亚带隙TRPL激发光谱中检测到ACIGS中$\text{Ev}+0.98\ \text{Ev} $的亚稳缺陷VSe-VCu。TRPL 50 ns的寿命受到cugain等中隙缺陷密度的限制。光浸泡前后TRPL动力学的相似性表明,优化后的ACIGS薄膜亚稳态较低,因为VCu-VSe缺陷的密度降至1015cm−3以下。该研究表明,ACIGS提高了电池效率和可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical Characterization of Defects in High-efficiency (Ag,Cu)(In,Ga)Se2
We applied time-resolved photoluminescence (TRPL) spectroscopy to study optimized chalcopyrite (Ag,Cu)(In,Ga)Se2 thin films. The device shows power conversion efficiency of 18.7%. The metastable defect VSe-VCu within ACIGS at $\text{Ev}+0.98\ \text{eV}$ is detected in sub-bandgap TRPL excitation spectra. TRPL lifetime of 50 ns is limited by the density of mid-gap defects such as CuGaor CuIn. The similarity of TRPL dynamics before and after light soaking indicates the optimized ACIGS thin film is less metastable because the density of VCu-VSe defect is reduced to below 1015cm−3. This study indicates that ACIGS has improved cell efficiency and reliability characteristics.
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