MOCVD GaAs和GaAs/Ge太阳能电池的电子辐射和退火

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105839

M. Chung, D. Meier, J.R. Szedon, J. Bartko

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引用次数: 3

摘要

利用1mev电子对mocvd生长的GaAs/GaAs细胞和GaAs/Ge细胞的辐射耐受性进行了比较。电子辐射剂量为1*10/sup 16/ cm/sup -2/， GaAs/GaAs的总剂量为1*10/sup 17/ cm/sup -2/， GaAs/Ge的总剂量为7*10/sup 16/ cm/sup -2/。每次给药后，细胞在250℃或300℃的氮气中退火1小时。结果表明，GaAs/Ge细胞的耐辐射性能优于GaAs/GaAs细胞。介绍了DLTS和EBIC测量方法。

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Electron radiation and annealing of MOCVD GaAs and GaAs/Ge solar cells

A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<>

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

发文量