R. Adzhri, M. Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo, M. Nuzaihan, A. H. Azman, M. Zaki
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Reactive Ion etching of TiO2 thin film: The impact of different gaseous
Titanium dioxide (TiO2) is one of a metal oxide material group that shows a promising future in biosensors application. TiO2 possess both physical and chemical resistant that can extend a device lifespan. However, etching of TiO2 with very high selectivity is a challenging process in achieving good and desired profile particularly in nanometer scale. In this work, we present the anisotropic etch profile. Three types of ICP-RIE recipes are used i.e. CF4/O2, Ar/SF6 and CF4/Ar. Prior to that, the TiO2 sol-gel is deposited on top of SiO2 layer. All the results are optically and physically characterized by using 3D-surface profilometer and atomic force microscopy (AFM) and finally followed by electrical characterization.
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