ТермоэлектрическиесвойстватвердыхрастворовAg - =子= 8 - = / SUB = ge - =子= 1 - x = / SUB = mn - =子= - x = / SUB = te - =子= 6 - = / SUB =

Физика и техника полупроводников Pub Date : 2022-01-01 DOI:10.21883/ftp.2022.09.53406.9760

Р. Н. Рагимов, А.С. Кахраманова, Д. Г. Араслы, А. А. Халилова, И. Х. Мамедов, А.Р. Халилзаде

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摘要

摘要不同锰含量的Ag8Ge1-xMnxTe6固溶体(x = 0;0.05;0.1;在0.6 GPa的压力下，通过合金化和进一步压制制备了0.2)。通过x射线衍射研究表明，锰原子的引入导致Ag8Ge1-xMnxTe6晶格的可压缩性。所有p型样品在180 ~ 220 K温度下均具有较高的相变电阻。用莫特比分析了220 ~ 300 K范围内电导率的增加;在温度T > 320 K时，所有成分都有半导体行为。在550 K时，Ag8Ge1-xMnxTe6固溶体的热电性能最高，为ZT = 0.7 (p < 0.05)。

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Термоэлектрические свойства твердых растворов Ag-=SUB=-8-=/SUB=-Ge-=SUB=-1-x-=/SUB=-Mn-=SUB=-x-=/SUB=-Te-=SUB=-6-=/SUB=-

Abstract. Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0; 0.05; 0.1; 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By the X-ray diffraction studies have shown that the introduction of manganese atoms leads to the compressibility of the Ag8Ge1-xMnxTe6 lattice. All p-type samples had high resistance below the transition at temperatures of 180 - 220 K. An increase in electrical conductivity in the range of 220 - 300 K was analyzed using the Mott ratio; at temperatures T > 320 K, semiconductor behavior is observed in all compositions. The highest thermoelectric figure of merit ZT = 0.7 at 550 K was obtained for a solid solution of the composition Ag8Ge1-xMnxTe6 (х = 0.05).

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