改进的压电MEMS声发射传感器

2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) Pub Date : 2021-06-20 DOI:10.1109/Transducers50396.2021.9495552

Yongfang Li, T. Omori, K. Watabe, H. Toshiyoshi

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引用次数: 0

摘要

本文介绍了提高压电MEMS声发射传感器灵敏度的两种创新方法。通过优化顶电极尺寸并在顶电极上添加假体结构，制备的MEMS AE传感器在谐振时的峰值灵敏度可提高到148 V/m/s，是全尺寸顶电极传感器的10倍左右。进行了标准铅笔芯断口(PLB)试验，验证了对声发射波的探测能力。结果表明，制备的单型压电MEMS声发射传感器的峰值灵敏度为45 V/m/s，与商用体压电声发射传感器具有相同的检测灵敏度。

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Improved Piezoelectric MEMS Acoustic Emission Sensors

This paper describes two innovative methods for improving the sensitivity of piezoelectric MEMS acoustic emission (AE) sensors. By optimizing the top electrode dimensions and adding a dummy structure to it, the peak sensitivity of the fabricated MEMS AE sensors at resonance can be improved to 148 V/m/s, which is about 10-fold greater than that of sensors with a full-size top electrode. Standard pencil-lead break (PLB) tests are conducted to verify the detection capability of AE waves. As a result, the fabricated single-type piezoelectric MEMS AE sensor, which has a peak sensitivity of 45 V/m/s, is shown to have the same level of detection sensitivity as a commercial bulk piezoelectric AE sensor.

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2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

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