考虑工艺变化的软误差影响建模

Chong Zhao, S. Dey
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引用次数: 4

摘要

本文讨论了导致可靠性退化的两类变量的综合效应。第一个是工艺变化水平的增加;第二种是一种特殊类型的环境变化——辐射引起的软误差。它们同时存在可能会对性能造成很大的负面影响。考虑到CMOS数字电路中存在的芯片间通道长度变化,我们提出了一种统计方法来模拟组合电路中瞬态软误差的产生和传播。实验结果表明,信道长度的变化会显著加剧软误差效应,使用该方法可以准确地评估软误差效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling soft error effects considering process variations
This paper addresses the aggregated effects of two types of variations that contribute to the reliability degradation. The first one is the increasing level of process variation; the second one is one particular type of environmental variation - the radiation-induced soft error. Their simultaneous presence can cause large negative performance impact. We present a statistical approach to model the generation and propagation of a transient soft error inside combinational circuits considering the existence of inter-die channel length variation in CMOS digital circuits. Experiment results have demonstrated that channel length variation can significantly aggravate the soft error effect, which can be accurately evaluated using the proposed methodology.
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