金属溶液中硅LPE的生长动力学研究

T. Wang, T.F. Ciszek
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引用次数: 1

摘要

为了在铸造的冶金级硅(MG-Si)太阳能电池衬底上形成器件级的硅液相外延(LPE),研究了金属溶液中硅液相外延(LPE)的生长动力学。我们报道了Al和Cu的混合物作为Si的溶剂,通过Al- sio /sub - 2/反应增强了溶液对衬底的润湿,并且由于其高溶剂功率而产生各向同性生长和宏观光滑表面。该溶剂体系还通过溶液中适当的Al和Cu组成来控制Al的掺入。用粗糙的界面/扩散边界层模型计算了层的生长速率,结果与实验结果吻合较好,表明在液体中只有一个小的边界层(/spl sim/0.1 cm),硅的扩散系数为/spl sim/2/spl乘以/10/sup -4/ cm/sup /2/s。在MG-Si衬底上生长的薄层(/spl sim/30 /spl mu/m)的少数载流子扩散长度大于层厚。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth kinetics studies of silicon LPE from metal solutions
Growth kinetics of silicon liquid phase epitaxy (LPE) from metal solutions was studied in pursuit of device-quality layer formation on cast, metallurgical-grade silicon (MG-Si) substrates for solar cells. We report that a mixture of Al and Cu as a solvent for Si enhances solution wetting to the substrate by Al-SiO/sub 2/ reaction, and generates isotropic growth and macroscopically smooth surfaces due to its high solvent power. This solvent system also controls Al incorporation into the layer by proper Al and Cu compositions in the solution. The layer growth rate was calculated with a rough interface/diffusion boundary layer model and was found to be in good agreement with experimental results, indicating only a small boundary layer (/spl sim/0.1 cm) and a silicon diffusivity of /spl sim/2/spl times/10/sup -4/ cm/sup 2//s in the liquid. The thin layer (/spl sim/30 /spl mu/m) grown on the MG-Si substrate has a minority-carrier diffusion length greater than the layer thickness.
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