Влияние давления мышьяка при заращивании квантовых точек InAs тонким низкотемпературным слоем GaAs на их оптические свойства

This paper presents the results of the experimental studies of InAs quantum dot overgrowth by a low-temperature GaAs layer at different arsenic vapor pressures. It is revealed that a threefold decrease in the arsenic pressure at a fixed deposition rate of the capping layer leads to a change in the shape of the photoluminescence spectrum of quantum dots with one maximum at the level of 1.19 eV to the shape of the spectrum with two low-energy contributions at the levels of 1.08 and 1.15 eV. Based on the analysis of the power dependences of the photoluminescence spectra, it is found that the low-energy contributions of the photoluminescence of quantum dots overgrown at a low arsenic pressure correspond to the ground-state emission two groups of quantum dots with different average sizes formed during mass transfer in the “quantum dot – wetting layer – matrix” system.