具有自动幅度和温度补偿的低功耗，10 GHz背控调谐电压控制振荡器

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512) Pub Date : 2004-05-23 DOI:10.1109/ISCAS.2004.1329030

R. Murji, M. Deen

{"title":"具有自动幅度和温度补偿的低功耗，10 GHz背控调谐电压控制振荡器","authors":"R. Murji, M. Deen","doi":"10.1109/ISCAS.2004.1329030","DOIUrl":null,"url":null,"abstract":"This paper presents the design results of a 10 GHz CMOS voltage-controlled oscillator (VCO) with automatic amplitude control (AAC). The circuit is an LC oscillator using an integrated octagonal inductor. The VCO is fully integrated and simulation results are shown for a deep n-well 0.18 /spl mu/m CMOS process which allows access to the body of NMOS transistors. The frequency is tuned using the back-gated voltages of the NMOS cross-coupled differential pair in the oscillator. Over temperature variations, the frequency of operation is 10.02 GHz, with a tuning range of 500 MHz, phase noise of -102 dBc/Hz@1MHz and power dissipation of 3.7 mW from a 1.8 V supply.","PeriodicalId":6445,"journal":{"name":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","volume":"63 1","pages":"IV-421"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A low-power, 10 GHz back-gated tuned voltage controlled oscillator with automatic amplitude and temperature compensation\",\"authors\":\"R. Murji, M. Deen\",\"doi\":\"10.1109/ISCAS.2004.1329030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design results of a 10 GHz CMOS voltage-controlled oscillator (VCO) with automatic amplitude control (AAC). The circuit is an LC oscillator using an integrated octagonal inductor. The VCO is fully integrated and simulation results are shown for a deep n-well 0.18 /spl mu/m CMOS process which allows access to the body of NMOS transistors. The frequency is tuned using the back-gated voltages of the NMOS cross-coupled differential pair in the oscillator. Over temperature variations, the frequency of operation is 10.02 GHz, with a tuning range of 500 MHz, phase noise of -102 dBc/Hz@1MHz and power dissipation of 3.7 mW from a 1.8 V supply.\",\"PeriodicalId\":6445,\"journal\":{\"name\":\"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)\",\"volume\":\"63 1\",\"pages\":\"IV-421\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2004.1329030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2004.1329030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

本文介绍了一种具有自动幅度控制功能的10ghz CMOS压控振荡器(VCO)的设计结果。该电路是采用集成八角形电感的LC振荡器。VCO完全集成，仿真结果显示了一个深n阱0.18 /spl mu/m的CMOS工艺，可以访问NMOS晶体管的主体。使用振荡器中NMOS交叉耦合差分对的背门控电压调谐频率。在温度变化时，工作频率为10.02 GHz，调谐范围为500 MHz，相位噪声为-102 dBc/Hz@1MHz, 1.8 V电源功耗为3.7 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A low-power, 10 GHz back-gated tuned voltage controlled oscillator with automatic amplitude and temperature compensation

This paper presents the design results of a 10 GHz CMOS voltage-controlled oscillator (VCO) with automatic amplitude control (AAC). The circuit is an LC oscillator using an integrated octagonal inductor. The VCO is fully integrated and simulation results are shown for a deep n-well 0.18 /spl mu/m CMOS process which allows access to the body of NMOS transistors. The frequency is tuned using the back-gated voltages of the NMOS cross-coupled differential pair in the oscillator. Over temperature variations, the frequency of operation is 10.02 GHz, with a tuning range of 500 MHz, phase noise of -102 dBc/Hz@1MHz and power dissipation of 3.7 mW from a 1.8 V supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)

自引率

0.00%

发文量