改进表面化学计量学的GaSb样品的太赫兹辐射

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422182

S. Winnerl, T. Dekorsy, S. Sinning, M. Helm

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引用次数: 0

摘要

我们报道了用热修饰表面化学计量学方法从GaSb表面发射的太赫兹辐射。热处理显著增加了GaSb样品的太赫兹辐射。在最佳条件下，即退火温度为500/spl℃时，发射与n掺杂GaAs的发射相当。太赫兹辐射是由于载流子在表面场中的加速引起的，这是由表面分解引起的。在泵浦-探针实验中，Sb相干声子的观测证实了表面分解。

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THz emission from GaSb samples with modified surface stoichiometry

We report on the terahertz emission from GaSb surfaces with thermally modified surface stoichiometry. The thermal treatment increases significantly the THz emission from the GaSb samples. For optimal conditions, namely an annealing temperature of 500/spl deg/C, the emission is comparable to the emission from n-doped GaAs. The THz emission is due to the acceleration of carriers in a surface field, caused by a surface decomposition. The surface decomposition was confirmed by the observation of Sb coherent phonons in pump-probe experiments.

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Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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