电化学传感器a-Si微纳米间隙结构的制备与表征

T. Dhahi, U. Hashim, N. M. Ahmed, Md. Eaqub Ali
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摘要

本文综述了微纳米隙在电化学传感器和生物分子检测中的发展和应用。讨论了微、纳米间隙的制备方法及其性能,以及它们在电化学传感器和生物分子检测方面的优势。近年来,生物和医学领域在生物传感器和能够表征和量化电化学传感器的生物芯片的发展方面取得了很大进展。为了了解灵敏度与纳米结构之间的重要关系,本文介绍了电化学传感器微纳米结构的制备和表征。本文提出了两种掩模设计。第一个掩模是带有Al电极的横向微纳米间隙,第二个掩模是衬垫Al电极图案。在以硅和铝为电极的制备过程中引入了横向微间隙。基于标准的CMOS工艺及其电导率表征,采用传统的UV光刻技术和干式蚀刻a-Si层和湿式蚀刻Al表面工艺制备微纳米隙。采用半导体参数分析仪(SPA)、频谱分析仪(Spectrum Analyzer)、v - cv站对器件进行电学表征,通过电导率、电阻率和电容测试对器件结构进行表征和检查,通过进一步的I-V曲线结果可以看出器件的微间隙很小,电流为纳米安培。经文献验证,所制备的间隙与微间隙的特性接近。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and characterization of a-Si micro and nano-gap structure for electrochemical sensor
The development and application of micro and nanogap for electrochemical sensors and biomoleculs detection are reviewed in this article. The preparation methods of micro and nanogap and their properties are discussed along with their advantages towards electrochemical sensors and biomolecules detection. In the recent year, the biological and medical field has seen great advances in the development of biosensors and biochips capable of characterizing and quantifying electrochemical sensor. To understand the important relationship between the sensibility and nano structure we introduce this article about the fabrication and characterization of micro and nanogap structure for electrochemical sensor. In this paper, 2 masks designs are proposed. First mask is the lateral micro and nanogap with Al electrode and the second mask is for pad Al electrode pattern. Lateral micro gaps are introduced in the fabrication process using a-silicon and Al as an electrode. Conventional UV lithography technique and dry etching for a-Si layer with wet etching for Al surface processes are used to fabricate the micro and nanogap based on the standard CMOS technology and characterization of its conductivity. The electrical characterization are applied by using Semiconductor Parameter Analyzer (SPA), Spectrum Analyzer, IV–CV Station for electrical characteristic, Conductivity, resistivity and capacitance test is performed to characterize and check the structure of the device, which resulted in a small microgap as was revealed by further I–V curve result that showed a current in nano amps. On verification with literature the characteristics of the fabricated gap was close to that of a microgap.
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