Y. Kwon, Chang-Ju Lee, Do-kywn Kim, Heon-Bok Lee, S. Hahm
{"title":"利用ELOG和激光提升技术形成的n面GaN层上的垂直GaN肖特基势垒二极管,用于大功率应用","authors":"Y. Kwon, Chang-Ju Lee, Do-kywn Kim, Heon-Bok Lee, S. Hahm","doi":"10.1109/EDSSC.2011.6117622","DOIUrl":null,"url":null,"abstract":"We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around •10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"8 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application\",\"authors\":\"Y. Kwon, Chang-Ju Lee, Do-kywn Kim, Heon-Bok Lee, S. Hahm\",\"doi\":\"10.1109/EDSSC.2011.6117622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around •10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":\"8 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application
We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around •10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.