利用ELOG和激光提升技术形成的n面GaN层上的垂直GaN肖特基势垒二极管,用于大功率应用

Y. Kwon, Chang-Ju Lee, Do-kywn Kim, Heon-Bok Lee, S. Hahm
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引用次数: 0

摘要

我们研究了一种垂直型GaN肖特基势垒二极管(SBD),它位于激光提升(LLO) GaN层上,顶部肖特基接触金属为镍和铝。I-V特性对肖特基金属的依赖性不强,正向压降高于理论值。金属氧化物半导体(MOS)电容器的C-V特性表现为在•10 V左右从积累到反转。这些结果表明,宽频带隙薄膜层保留在n面氮化镓层的表面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application
We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around •10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.
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