25 nm以下Cr2O3层Pt/Co/Au/Cr2O3/Pt薄膜的结构、磁性和电学性能

Q3 Engineering
Y. Shiratsuchi, J. Shen, Y. Tao, K. Takahara, K. Toyoki, R. Nakatani
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引用次数: 0

摘要

利用磁电氧化铬的垂直交换偏置具有电场触发开关能力,诱导这种偏置的氧化铬层厚度限制是一个研究课题。本文研究了厚度为5.7 ~ 25 nm的Pt/Co/Au/ cr2o3 /Pt薄膜的结构、磁性和电学性能。采用磁控溅射的方法,在5.7 nm厚的cr2o3表面形成了结晶良好的cr2o3(0001)层。所有研究的薄膜都表现出垂直的磁各向异性。随着厚度的减小,单轴磁各向异性能密度增大,厚度为5.7 nm的膜的磁各向异性能密度为810±90 kJ/m 3。在80 K以上,垂直交换偏置得到了评价;在80 K时,25 nm厚的cr2o3薄膜的交换各向异性能量密度为0.30 mJ/ m2。交换偏置在18nm以下不存在。相反,观察到矫顽力增强,通过精确控制界面交换耦合产生交换偏置。对于5.7 nm厚的cr2o3层,电阻率约为510 5 m,对于磁电应用来说已经足够高了。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, Magnetic, and Electric Properties of Pt/Co/Au/Cr2O3/Pt Thin Film with Cr2O3 Layer below 25 nm
Perpendicular exchange bias using magnetoelectric Cr 2 O 3 has an electric-field triggered switching ability, and the thickness limit of the Cr 2 O 3 layer for inducing this bias is a topic of research. In this paper, we investigated the structural, magnetic, and electric properties of Pt/Co/Au/Cr 2 O 3 /Pt thin films with a Cr 2 O 3 layer in the thickness range of 5.7 to 25 nm. By using a magnetron sputtering method, a well-crystallized Cr 2 O 3 (0001) layer was formed in 5.7-nm-thick Cr 2 O 3 . All studied films showed perpendicular magnetic anisotropy. The uniaxial magnetic anisotropy energy density increased as the Cr 2 O 3 thickness decreased, and 810±90 kJ/m 3 was obtained for the film with 5.7-nm-thick Cr 2 O 3 . Perpendicular exchange bias was evaluated above 80 K, and an exchange anisotropy energy density of 0.30 mJ/m 2 was observed for the film with a 25-nm-thick Cr 2 O 3 at 80 K. The exchange bias could not be observed below 18 nm. Instead, coercivity enhancement, which yields the exchange bias by precisely controlling interfacial exchange coupling, was observed. The electric resistivity was about 5  10 5  ·m for the 5.7-nm-thick Cr 2 O 3 layer, which is sufficiently high for magnetoelectric applications.
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来源期刊
Journal of the Magnetics Society of Japan
Journal of the Magnetics Society of Japan Engineering-Electrical and Electronic Engineering
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