InGaAs/GaAs量子阱中自发发射量子效率的测量

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science Pub Date : 2008-05-04 DOI:10.1109/CLEO.2008.4551464

D. Ding, S. Johnson, Jiang-Bo Wang, Shui-Qing Yu, Yong-Hang Zhang

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引用次数: 0

摘要

采用光致发光法测定了分子束外延生长InGaAs/GaAs量子阱的自发发射量子效率。量子效率是由泵浦功率与集成光致发光信号之间的幂律推导出来的。

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Measurement of spontaneous emission quantum efficiency in InGaAs/GaAs quantum wells

The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal.

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来源期刊

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science

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