砷注入太赫兹辐射体的仿真与优化

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2006-02-09 DOI:10.1109/ICIMW.2004.1422222

M. Johnston, J. Lloyd‐Hughes, E. Casto-Camus, M. Fraser, C. Jagadish

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引用次数: 0

摘要

利用三维伪经典蒙特卡罗模拟研究了As/sup +/离子注入对脉冲太赫兹辐射发射体的影响。基于表面场发射器和光导开关的器件已经建模。在1.0 MeV和2.4 MeV下两次注入As/sup +/离子，在这些器件中产生了均匀分布的空位，从而导致了太赫兹的产生。我们计算出离子注入增加了器件的太赫兹带宽，但代价是降低了较低太赫兹频率的频谱强度。

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Simulation and optimization of arsenic-implanted THz emitters

We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As/sup +/ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As/sup +/ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ion-implantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.

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Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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