面向操作的RRAM关键性能提升方案

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562578

B. Chen, B. Gao, S. W. Sheng, L.F. Liu, X.Y. Liu, Y.S. Chen, Y. Wang, J. Kang, B. Yu

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引用次数: 0

摘要

基于对开关行为的新发现，首次提出了一种新的存储操作原理来控制开关，并提高了基于氧化物的RRAM的性能，包括器件与器件之间和周期与周期之间的均匀性、RESET电流和rrs /RLRS比窗口。此外，还开发了一种数值模拟方法来评估新工作原理在缩放RRAM器件中的有效性。

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Operation-oriented solution to boost key performance of RRAM

Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle in scaled RRAM devices.

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2010 Silicon Nanoelectronics Workshop

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