气桥场极板增强功率AlGaN/GaN hemt击穿电压

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229090

G. Xie, E. Xu, Junmin Lee, N. Hashemi, F. Y. Fu, Bo Zhang, W. Ng

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引用次数: 4

摘要

提出了一种新型气桥场极板(AFP)增强功率AlGaN/GaN hemt击穿电压的技术。该装置具有从源跃过栅极区域并落在栅极和漏极之间的金属场板。仿真结果表明，带气桥场板的hemt可以为器件表面电场的调制提供新的自由度。在给定工艺条件下，栅极到漏极距离为6µm，栅极长度为0.8µm的器件在VGS =−5 V时获得450 V的正向阻断电压，比采用优化的传统场极板器件(240 V)的器件高两倍。

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Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

This paper presents a breakdown voltage enhancement technique for power AlGaN/GaN HEMTs by using novel Air-bridge Field Plate (AFP). The device features a metal field plate that jumps from the source over the gate region and lands between gate and drain. Simulation results show that the HEMTs with Air-bridge Field Plate can provide a new degree of freedom to modulate the device surface electric field. In a device with gate to drain distance of 6 µm, gate length of 0.8 µm, two times higher forward blocking voltage of 450 V was obtained at VGS = −5 V when compared to a device with an optimized conventional field plate device (240 V) for a given process.

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来源期刊

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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