多晶硅杂质掺杂过程中位错密度的降低

H. J. Choi, M. Bertoni, J. Hofstetter, D. Fenning, D. M. Powell, S. Castellanos, T. Buonassisi
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引用次数: 3

摘要

据报道,1250°C以上的等温退火可以降低多晶硅(mc-Si)中的位错密度,可能是通过成对位错湮灭。然而,这种高温过程也可能造成明显的杂质污染,抵消了位错密度降低对电池性能的积极影响。在这里,我们努力在820℃的低温下消除mc-Si中的位错,并在额外驱动力的帮助下刺激位错运动。在820°C P捕集后,观察到含有中等浓度某些金属的mc-Si的位错密度降低了60%以上。虽然确切的机制仍在讨论中,但现有证据表明,在吸垢层存在的情况下,杂质的净单向通量可能引起位错运动,导致位错密度降低。对少数载流子寿命随位错密度变化的分析表明,P扩散后寿命的提高可归因于位错密度降低和杂质浓度降低的综合作用。这些发现表明,在标准太阳能电池加工温度下,可能存在降低位错密度的机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dislocation density reduction during impurity gettering in multicrystalline silicon
Isothermal annealing above 1250 °C has been reported to reduce the dislocation density in multicrystalline silicon (mc-Si), presumably by pairwise dislocation annihilation. However, this high-temperature process may also cause significant impurity contamination, canceling out the positive effect of dislocation density reduction on cell performance. Here, efforts are made to annihilate dislocations in mc-Si in temperatures as low as 820 °C, with the assistance of an additional driving force to stimulate dislocation motion. A reduction of more than 60% in dislocation density is observed for mc-Si containing intermediate concentrations of certain metallic species after P gettering at 820 °C. While the precise mechanism remains in discussion, available evidence suggests that the net unidirectional flux of impurities in the presence of a gettering layer may cause dislocation motion, leading to dislocation density reduction. Analysis of minority carrier lifetime as a function of dislocation density suggests that lifetime improvements after P diffusion in these samples can be attributed to the combined effects of dislocation density reduction and impurity concentration reduction. These findings suggest there may be mechanisms to reduce dislocation densities at standard solar cell processing temperatures.
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