在0.5-/spl mu/m CMOS工艺中实现的插入损耗为0.8 db的900 mhz T/R开关

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) Pub Date : 2000-05-21 DOI:10.1109/CICC.2000.852680

F. Huang, K. O. Kenneth

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引用次数: 21

摘要

在0.5-/spl mu/m CMOS工艺中制备了用于3.0 v应用的单极双掷发射/接收开关。该开关具有0.8 db插入损耗和17dbm P/sub / 1dB/。低插入损耗是通过优化晶体管宽度和偏置电压以及最小化衬底电阻来实现的，而高1 dB压缩点是通过对输入和输出节点进行直流偏置来实现的。

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A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-/spl mu/m CMOS process

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-/spl mu/m CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P/sub 1dB/. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes.

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Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)

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