InP/Si衬底集成GalnAsP条纹激光器的激光特性

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2017-07-31 DOI:10.1109/CLEOPR.2017.8119057

Kazuki Uchida, T. Nishiyama, N. Kamada, Y. Onuki, Xu Han, G. Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, N. Hayasaka, K. Shimomura

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引用次数: 0

摘要

利用MOVPE技术在InP/Si衬底上成功制备了GalnAsP条纹激光器。采用外延生长1μm厚度的InP和硅衬底，采用直接晶片键合技术制备了InP/Si衬底。利用MOVPE生长了波长1.2μm的GalnAsP双异质结构激光器，采用标准SiO2沉积和光刻技术制备了条形激光器。在脉冲条件下获得室温激光。

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Lasing characteristics of GalnAsP stripe laser integrated on InP/Si substrate

We have successfully obtained GalnAsP stripe laser grown on InP/Si substrate by MOVPE. InP/Si substrate was prepared by direct wafer bonding technique using epitaxial grown 1μm thickness InP and silicon substrate. 1.2μm wavelength GalnAsP double heterostructure laser was grown by MOVPE, and stripe laser was fabricated using standard SiO2 deposition and lithography. Room temperature lasing was obtained under pulsed condition.

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来源期刊

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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