Stephen C. Richardson, J. Woods, Jake Daykin, J. Gorecki, R. Bek, N. Klokkou, James S. Wilkinson, M. Jetter, V. Apostolopoulos
{"title":"发射波长为1 μm的化合物半导体膜量子阱波导激光器","authors":"Stephen C. Richardson, J. Woods, Jake Daykin, J. Gorecki, R. Bek, N. Klokkou, James S. Wilkinson, M. Jetter, V. Apostolopoulos","doi":"10.1051/epjconf/202226601011","DOIUrl":null,"url":null,"abstract":"We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.","PeriodicalId":11731,"journal":{"name":"EPJ Web of Conferences","volume":"44 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm\",\"authors\":\"Stephen C. Richardson, J. Woods, Jake Daykin, J. Gorecki, R. Bek, N. Klokkou, James S. Wilkinson, M. Jetter, V. Apostolopoulos\",\"doi\":\"10.1051/epjconf/202226601011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.\",\"PeriodicalId\":11731,\"journal\":{\"name\":\"EPJ Web of Conferences\",\"volume\":\"44 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EPJ Web of Conferences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/epjconf/202226601011\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EPJ Web of Conferences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/epjconf/202226601011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm
We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.
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