Xiang Geng, Z. Jiao, Haobo Wang, Qun Fu, Haijian Zhong, Zhen Li
{"title":"AFM探针下电化学反应生长硅片上的Al2O3纳米线","authors":"Xiang Geng, Z. Jiao, Haobo Wang, Qun Fu, Haijian Zhong, Zhen Li","doi":"10.1109/NEMS.2006.334871","DOIUrl":null,"url":null,"abstract":"In this paper the Al<sub>2</sub>O<sub>3</sub> nanowire is grown on silicon chips by electrochemical reaction under AFM probe. The obtained Al<sub>2</sub>O<sub>3</sub> nanowire is regular arranged, the length and width of the nanowire can be controlled by adjusting applied voltage and scanning rate of AFM probe","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"20 1","pages":"679-681"},"PeriodicalIF":0.0000,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The Al2O3 nanowire grown on silicon chips by electrochemical reaction under AFM probe\",\"authors\":\"Xiang Geng, Z. Jiao, Haobo Wang, Qun Fu, Haijian Zhong, Zhen Li\",\"doi\":\"10.1109/NEMS.2006.334871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the Al<sub>2</sub>O<sub>3</sub> nanowire is grown on silicon chips by electrochemical reaction under AFM probe. The obtained Al<sub>2</sub>O<sub>3</sub> nanowire is regular arranged, the length and width of the nanowire can be controlled by adjusting applied voltage and scanning rate of AFM probe\",\"PeriodicalId\":6362,\"journal\":{\"name\":\"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"volume\":\"20 1\",\"pages\":\"679-681\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2006.334871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2006.334871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Al2O3 nanowire grown on silicon chips by electrochemical reaction under AFM probe
In this paper the Al2O3 nanowire is grown on silicon chips by electrochemical reaction under AFM probe. The obtained Al2O3 nanowire is regular arranged, the length and width of the nanowire can be controlled by adjusting applied voltage and scanning rate of AFM probe