Somnath Paul, V. Honkote, Ryan Kim, Turbo Majumder, Paolo A. Aseron, V. Grossnickle, R. Sankman, D. Mallik, S. Jain, S. Vangal, J. Tschanz, V. De
{"title":"一种用于物联网系统的能量收集无线传感器节点，具有近阈值电压IA-32微控制器，采用14nm三栅极CMOS","authors":"Somnath Paul, V. Honkote, Ryan Kim, Turbo Majumder, Paolo A. Aseron, V. Grossnickle, R. Sankman, D. Mallik, S. Jain, S. Vangal, J. Tschanz, V. De","doi":"10.1109/VLSIC.2016.7573485","DOIUrl":null,"url":null,"abstract":"A wireless sensor node (WSN) integrates a 0.79mm2 near-threshold voltage (NTV) 32-bit Intel Architecture (IA) microcontroller (MCU) in 14nm tri-gate CMOS, along with solar cell, energy harvester, flash memory, sensors and Bluetooth Low Energy (BLE) radio, to enable always-on always-sensing (AOAS) and advanced edge computing capabilities in Internet-of-Things (IoT) systems. The MCU features four independent voltage-frequency islands (VFI), a low-leakage SRAM array, an on-die oscillator clock source capable of operating at sub-threshold voltage, power gating and multiple active/sleep states, managed by an integrated power management unit (PMU). The MCU operates across a wide frequency (voltage) range of 297MHz (1V) to 0.5MHz (308mV), and achieves a peak energy efficiency of 17pJ/cycle at an optimum supply voltage (VOPT) of 370mV, operating at 3.5MHz. The WSN, powered by a solar cell, demonstrates sustained MHz AOAS operation, consuming only 360μW.","PeriodicalId":6512,"journal":{"name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","volume":"22 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"An energy harvesting wireless sensor node for IoT systems featuring a near-threshold voltage IA-32 microcontroller in 14nm tri-gate CMOS\",\"authors\":\"Somnath Paul, V. Honkote, Ryan Kim, Turbo Majumder, Paolo A. Aseron, V. Grossnickle, R. Sankman, D. Mallik, S. Jain, S. Vangal, J. Tschanz, V. De\",\"doi\":\"10.1109/VLSIC.2016.7573485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wireless sensor node (WSN) integrates a 0.79mm2 near-threshold voltage (NTV) 32-bit Intel Architecture (IA) microcontroller (MCU) in 14nm tri-gate CMOS, along with solar cell, energy harvester, flash memory, sensors and Bluetooth Low Energy (BLE) radio, to enable always-on always-sensing (AOAS) and advanced edge computing capabilities in Internet-of-Things (IoT) systems. The MCU features four independent voltage-frequency islands (VFI), a low-leakage SRAM array, an on-die oscillator clock source capable of operating at sub-threshold voltage, power gating and multiple active/sleep states, managed by an integrated power management unit (PMU). The MCU operates across a wide frequency (voltage) range of 297MHz (1V) to 0.5MHz (308mV), and achieves a peak energy efficiency of 17pJ/cycle at an optimum supply voltage (VOPT) of 370mV, operating at 3.5MHz. The WSN, powered by a solar cell, demonstrates sustained MHz AOAS operation, consuming only 360μW.\",\"PeriodicalId\":6512,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)\",\"volume\":\"22 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2016.7573485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2016.7573485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An energy harvesting wireless sensor node for IoT systems featuring a near-threshold voltage IA-32 microcontroller in 14nm tri-gate CMOS
A wireless sensor node (WSN) integrates a 0.79mm2 near-threshold voltage (NTV) 32-bit Intel Architecture (IA) microcontroller (MCU) in 14nm tri-gate CMOS, along with solar cell, energy harvester, flash memory, sensors and Bluetooth Low Energy (BLE) radio, to enable always-on always-sensing (AOAS) and advanced edge computing capabilities in Internet-of-Things (IoT) systems. The MCU features four independent voltage-frequency islands (VFI), a low-leakage SRAM array, an on-die oscillator clock source capable of operating at sub-threshold voltage, power gating and multiple active/sleep states, managed by an integrated power management unit (PMU). The MCU operates across a wide frequency (voltage) range of 297MHz (1V) to 0.5MHz (308mV), and achieves a peak energy efficiency of 17pJ/cycle at an optimum supply voltage (VOPT) of 370mV, operating at 3.5MHz. The WSN, powered by a solar cell, demonstrates sustained MHz AOAS operation, consuming only 360μW.
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