{"title":"恶劣热环境下银烧结连接GaN/DBA模附模块的显微组织和机械可靠性","authors":"Dongjin Kim, Chuantong Chen, K. Suganuma","doi":"10.1109/ICEPT47577.2019.245830","DOIUrl":null,"url":null,"abstract":"This study was carried out to evaluate the high-temperature and long-term reliability of a GaN/DBA die-attached module with Ag sinter joining and with high temperature solder in a harsh thermal aging process. And its performance compared with high temperature Pb-5Sn solder. A GaN die was structurally sound bonded on a DBA substrate by using a micron/submicron Ag sinter paste and a high content lead solder, respectively. The assembled specimens were subjected to a thermal aging test up to 500 storage hours at 250 °C, then die-shear tested. The initial shear strength of the Ag sinter joint achieved above 42 MPa, the Pb-5Sn joint was above 37MPa. In case of the sintered Ag structure sustained durable die shear strength after 250 hours of the thermal aging. On the other hand, the Pb-5Sn joints exhibited significantly decreased shear strength after 250 and 500 hours of the thermal aging by 60%. Consequently, the Ag sinter joints strengthen during isothermal aging with a necking growth without any defects. Pb-5Sn solder joints formed the NixSnx IMCs by thermal aging. These microstructure characteristics have an important influence on the fracture mechanism, the tendency of fracture path was investigated by SEM-EDX. The thermal aging behavior of a GaN/DBA die-attached module will be addressed further in this paper.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"27 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Microstructural and mechanical reliability of a GaN/DBA die-attached module with Ag sinter joining in harsh thermal environments\",\"authors\":\"Dongjin Kim, Chuantong Chen, K. Suganuma\",\"doi\":\"10.1109/ICEPT47577.2019.245830\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study was carried out to evaluate the high-temperature and long-term reliability of a GaN/DBA die-attached module with Ag sinter joining and with high temperature solder in a harsh thermal aging process. And its performance compared with high temperature Pb-5Sn solder. A GaN die was structurally sound bonded on a DBA substrate by using a micron/submicron Ag sinter paste and a high content lead solder, respectively. The assembled specimens were subjected to a thermal aging test up to 500 storage hours at 250 °C, then die-shear tested. The initial shear strength of the Ag sinter joint achieved above 42 MPa, the Pb-5Sn joint was above 37MPa. In case of the sintered Ag structure sustained durable die shear strength after 250 hours of the thermal aging. On the other hand, the Pb-5Sn joints exhibited significantly decreased shear strength after 250 and 500 hours of the thermal aging by 60%. Consequently, the Ag sinter joints strengthen during isothermal aging with a necking growth without any defects. Pb-5Sn solder joints formed the NixSnx IMCs by thermal aging. These microstructure characteristics have an important influence on the fracture mechanism, the tendency of fracture path was investigated by SEM-EDX. The thermal aging behavior of a GaN/DBA die-attached module will be addressed further in this paper.\",\"PeriodicalId\":6676,\"journal\":{\"name\":\"2019 20th International Conference on Electronic Packaging Technology(ICEPT)\",\"volume\":\"27 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 20th International Conference on Electronic Packaging Technology(ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT47577.2019.245830\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT47577.2019.245830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microstructural and mechanical reliability of a GaN/DBA die-attached module with Ag sinter joining in harsh thermal environments
This study was carried out to evaluate the high-temperature and long-term reliability of a GaN/DBA die-attached module with Ag sinter joining and with high temperature solder in a harsh thermal aging process. And its performance compared with high temperature Pb-5Sn solder. A GaN die was structurally sound bonded on a DBA substrate by using a micron/submicron Ag sinter paste and a high content lead solder, respectively. The assembled specimens were subjected to a thermal aging test up to 500 storage hours at 250 °C, then die-shear tested. The initial shear strength of the Ag sinter joint achieved above 42 MPa, the Pb-5Sn joint was above 37MPa. In case of the sintered Ag structure sustained durable die shear strength after 250 hours of the thermal aging. On the other hand, the Pb-5Sn joints exhibited significantly decreased shear strength after 250 and 500 hours of the thermal aging by 60%. Consequently, the Ag sinter joints strengthen during isothermal aging with a necking growth without any defects. Pb-5Sn solder joints formed the NixSnx IMCs by thermal aging. These microstructure characteristics have an important influence on the fracture mechanism, the tendency of fracture path was investigated by SEM-EDX. The thermal aging behavior of a GaN/DBA die-attached module will be addressed further in this paper.