16元生长结InGaAs/InP PIN光电探测器阵列在2”直径的InP衬底

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147408

D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland

{"title":"16元生长结InGaAs/InP PIN光电探测器阵列在2”直径的InP衬底","authors":"D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland","doi":"10.1109/ICIPRM.1991.147408","DOIUrl":null,"url":null,"abstract":"The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"4 1","pages":"444-446"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"16-element grown-junction InGaAs/InP PIN photodetector arrays on 2\\\" diameter InP substrates\",\"authors\":\"D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland\",\"doi\":\"10.1109/ICIPRM.1991.147408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"4 1\",\"pages\":\"444-446\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了一种适用于1.3 ~ 1.6 μ m波长应用的16元InGaAs/InP PIN线性光电探测器阵列的制作和性能特点。探测器的设计依赖于二极管的生长pn结，并避免产生难以钝化的暴露InGaAs结。阵列制造过程完全兼容未来基于inp的电子器件的单片集成。获得了令人满意的好阵列产率。光学串扰测量在直流和射频下进行，阵列安装在光栅解复用器中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

16-element grown-junction InGaAs/InP PIN photodetector arrays on 2" diameter InP substrates

The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量