低k/Cu互连系统可靠性和性能的定量预测

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843939

K. Banerjee, A. Mehrotra, W. Hunter, K. Saraswat, K. Goodson, S.S. Wong

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引用次数: 16

摘要

本文提出了一种定量分析电迁移(EM)可靠性和互连性能在确定低k/Cu互连系统的最佳互连设计中的作用的方法。结果表明，只要对互连性能进行优化，就可以满足信号线的电磁设计限制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Quantitative projections of reliability and performance for low-k/Cu interconnect systems

This paper presents a methodology for quantitative analysis of the role of electromigration (EM) reliability and interconnect performance in determining the optimal interconnect design in low-k/Cu interconnect systems. It is demonstrated that EM design limits for signal lines are satisfied once interconnect performance is optimized.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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