{"title":"2 at的影响。添加% Si对Fe-13Cr合金辐射缺陷退火的影响","authors":"A. Nikolaev","doi":"10.17804/2410-9908.2021.4.023-033","DOIUrl":null,"url":null,"abstract":"The paper presents data on electrical resistivity recovery in the Fe-13.4Cr and Fe13.6Cr-1.9Si alloys during isochronal annealing after 5 MeV electron irradiation below 77 K. Long-range migration of radiation-induced defects starts slightly above 200 K in Fe-13.4Cr. The silicon addition in Fe13.6Cr-1.9Si leads to immobilization of Frenkel pair defects thus making the peaks of the stages of the onset of long-range migration shift towards high temperatures up to 370 K and 420 K for self-interstitial atoms and vacancies, respectively. This finding confirms the data obtained earlier for Fe16Cr-Si alloys by means of positron annihilation technique (JNM 508(2018) 100–106) on trapping of radiation-induced defects on Si agglomerates (clusters consisting of several silicon atoms) formed during defect migration.","PeriodicalId":11165,"journal":{"name":"Diagnostics, Resource and Mechanics of materials and structures","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of 2 at. % Si addition on the annealing of radiation-induced defects in the Fe-13Cr alloy\",\"authors\":\"A. Nikolaev\",\"doi\":\"10.17804/2410-9908.2021.4.023-033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents data on electrical resistivity recovery in the Fe-13.4Cr and Fe13.6Cr-1.9Si alloys during isochronal annealing after 5 MeV electron irradiation below 77 K. Long-range migration of radiation-induced defects starts slightly above 200 K in Fe-13.4Cr. The silicon addition in Fe13.6Cr-1.9Si leads to immobilization of Frenkel pair defects thus making the peaks of the stages of the onset of long-range migration shift towards high temperatures up to 370 K and 420 K for self-interstitial atoms and vacancies, respectively. This finding confirms the data obtained earlier for Fe16Cr-Si alloys by means of positron annihilation technique (JNM 508(2018) 100–106) on trapping of radiation-induced defects on Si agglomerates (clusters consisting of several silicon atoms) formed during defect migration.\",\"PeriodicalId\":11165,\"journal\":{\"name\":\"Diagnostics, Resource and Mechanics of materials and structures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Diagnostics, Resource and Mechanics of materials and structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.17804/2410-9908.2021.4.023-033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diagnostics, Resource and Mechanics of materials and structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17804/2410-9908.2021.4.023-033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of 2 at. % Si addition on the annealing of radiation-induced defects in the Fe-13Cr alloy
The paper presents data on electrical resistivity recovery in the Fe-13.4Cr and Fe13.6Cr-1.9Si alloys during isochronal annealing after 5 MeV electron irradiation below 77 K. Long-range migration of radiation-induced defects starts slightly above 200 K in Fe-13.4Cr. The silicon addition in Fe13.6Cr-1.9Si leads to immobilization of Frenkel pair defects thus making the peaks of the stages of the onset of long-range migration shift towards high temperatures up to 370 K and 420 K for self-interstitial atoms and vacancies, respectively. This finding confirms the data obtained earlier for Fe16Cr-Si alloys by means of positron annihilation technique (JNM 508(2018) 100–106) on trapping of radiation-induced defects on Si agglomerates (clusters consisting of several silicon atoms) formed during defect migration.
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