一种采用LTCC封装的256-QAM 39ghz双通道收发器芯片组,用于65nm CMOS的5G通信

Zhilin Chen, Zhengdong Jiang, Zhiqing Liu, Yixuan Cheng, Lin Zhang, Dong Chen, Jingzhi Zhang, Shoutian Sun, Jiayu Dong, P. Liu, Youxi Zhou, Huihua Liu, Chenxi Zhao, Yunqiu Wu, Xianghua Li, Jianping Zhao, K. Kang
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引用次数: 22

摘要

提出了一种用于5G固定无线接入(FWA)通信的LTCC封装的39ghz双通道收发器芯片组。该收发器芯片组集成了两个变增益变频通道、一个LO链和一个SPI块。该芯片组采用标准的65纳米CMOS工艺制造。TX的最大增益为11 dB, $\mathbf{P}_{\mathbf{sat}}$为8.4 dBm,而RX的最大增益为52 dB, NF为5.4 dB, OP1dB为7.2 dBm。单通道通信链路在1米距离上实现64 QAM调制的EVM为3.72%,256 QAM调制的EVM为3.76%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 256-QAM 39 GHz Dual-Channel Transceiver Chipset with LTCC Package for 5G Communication in 65 nm CMOS
This paper presents a 39 GHz dual-channel transceiver chipset with LTCC package for 5G fixed wireless access (FWA) communication. The proposed transceiver chipset integrates two variable-gain frequency conversion channels, one LO chain and one SPI block. This chipset is fabricated in a standard 65 nm CMOS process. The TX results a maximum gain of 11 dB and a $\mathbf{P}_{\mathbf{sat}}$ of 8.4 dBm, while the RX supplies a maximum gain of 52 dB, a NF of 5.4 dB and an OP1dB of 7.2 dBm. The single-chan-nel communication link achieves an EVM of 3.72% for 64 QAM modulation and an EVM of 3.76% for 256 QAM modulation over 1 m distance.
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