Zhilin Chen, Zhengdong Jiang, Zhiqing Liu, Yixuan Cheng, Lin Zhang, Dong Chen, Jingzhi Zhang, Shoutian Sun, Jiayu Dong, P. Liu, Youxi Zhou, Huihua Liu, Chenxi Zhao, Yunqiu Wu, Xianghua Li, Jianping Zhao, K. Kang
{"title":"一种采用LTCC封装的256-QAM 39ghz双通道收发器芯片组,用于65nm CMOS的5G通信","authors":"Zhilin Chen, Zhengdong Jiang, Zhiqing Liu, Yixuan Cheng, Lin Zhang, Dong Chen, Jingzhi Zhang, Shoutian Sun, Jiayu Dong, P. Liu, Youxi Zhou, Huihua Liu, Chenxi Zhao, Yunqiu Wu, Xianghua Li, Jianping Zhao, K. Kang","doi":"10.1109/MWSYM.2018.8439667","DOIUrl":null,"url":null,"abstract":"This paper presents a 39 GHz dual-channel transceiver chipset with LTCC package for 5G fixed wireless access (FWA) communication. The proposed transceiver chipset integrates two variable-gain frequency conversion channels, one LO chain and one SPI block. This chipset is fabricated in a standard 65 nm CMOS process. The TX results a maximum gain of 11 dB and a $\\mathbf{P}_{\\mathbf{sat}}$ of 8.4 dBm, while the RX supplies a maximum gain of 52 dB, a NF of 5.4 dB and an OP1dB of 7.2 dBm. The single-chan-nel communication link achieves an EVM of 3.72% for 64 QAM modulation and an EVM of 3.76% for 256 QAM modulation over 1 m distance.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"11 1","pages":"1476-1479"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"A 256-QAM 39 GHz Dual-Channel Transceiver Chipset with LTCC Package for 5G Communication in 65 nm CMOS\",\"authors\":\"Zhilin Chen, Zhengdong Jiang, Zhiqing Liu, Yixuan Cheng, Lin Zhang, Dong Chen, Jingzhi Zhang, Shoutian Sun, Jiayu Dong, P. Liu, Youxi Zhou, Huihua Liu, Chenxi Zhao, Yunqiu Wu, Xianghua Li, Jianping Zhao, K. Kang\",\"doi\":\"10.1109/MWSYM.2018.8439667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 39 GHz dual-channel transceiver chipset with LTCC package for 5G fixed wireless access (FWA) communication. The proposed transceiver chipset integrates two variable-gain frequency conversion channels, one LO chain and one SPI block. This chipset is fabricated in a standard 65 nm CMOS process. The TX results a maximum gain of 11 dB and a $\\\\mathbf{P}_{\\\\mathbf{sat}}$ of 8.4 dBm, while the RX supplies a maximum gain of 52 dB, a NF of 5.4 dB and an OP1dB of 7.2 dBm. The single-chan-nel communication link achieves an EVM of 3.72% for 64 QAM modulation and an EVM of 3.76% for 256 QAM modulation over 1 m distance.\",\"PeriodicalId\":6675,\"journal\":{\"name\":\"2018 IEEE/MTT-S International Microwave Symposium - IMS\",\"volume\":\"11 1\",\"pages\":\"1476-1479\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE/MTT-S International Microwave Symposium - IMS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2018.8439667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/MTT-S International Microwave Symposium - IMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2018.8439667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 256-QAM 39 GHz Dual-Channel Transceiver Chipset with LTCC Package for 5G Communication in 65 nm CMOS
This paper presents a 39 GHz dual-channel transceiver chipset with LTCC package for 5G fixed wireless access (FWA) communication. The proposed transceiver chipset integrates two variable-gain frequency conversion channels, one LO chain and one SPI block. This chipset is fabricated in a standard 65 nm CMOS process. The TX results a maximum gain of 11 dB and a $\mathbf{P}_{\mathbf{sat}}$ of 8.4 dBm, while the RX supplies a maximum gain of 52 dB, a NF of 5.4 dB and an OP1dB of 7.2 dBm. The single-chan-nel communication link achieves an EVM of 3.72% for 64 QAM modulation and an EVM of 3.76% for 256 QAM modulation over 1 m distance.