微系统市场驱动技术的成就与展望

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2007-06-10 DOI:10.1109/SENSOR.2007.4300075

M. Puech, J. Thevenoud, J. Gruffat, N. Launay, P. Godinat, O. Le Barillec

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引用次数: 6

摘要

本文介绍了近十年来硅的DRIE的发展。从最初的MEMS产品要求开始，DRIE展示了其随着微系统要求的发展而提高交付性能的潜力。在不到十年的时间里，DRIE蚀刻速率和纵横比已经增加了10倍。这种突出的能力有利于在新的微电子应用中采用它，从而在开发广泛的工具和工艺方面向前迈进一步。因此，微系统将受益于这些最新的发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Achievements and Perspectives of the Drie Technology for the Microsystems Market

This paper presents the evolution of the DRIE of silicon over the last decade. Starting with the initial MEMS product requirements, the DRIE demonstrated its potential to improve the delivered performances in line with the evolution of the Microsystems requirements. In less than a decade, the DRIE etching rate and aspect ratio have been multiplied by an impressive factor of 10. This outstanding capabilities favored its adoption in new microelectronic applications which lead to a step forward in the development of an extended range of tools and processes. As a result, the Microsystems will benefit from those latest developments.

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TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

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