空心硅纳米线单轴拉伸试验的分子动力学模拟

S. Semchuk, V. Kuryliuk, Danylo Vernygora, A. Kuryliuk, T. Tsaregradskaya
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引用次数: 0

摘要

本文采用分子动力学模拟方法研究了具有空心几何结构的硅纳米线的力学行为。以原始硅纳米线为参考,比较了两种结构的力学性能。结果表明,空腔体积分数大于50%的空心硅纳米线比空腔体积分数较小的纳米线具有更大的断裂应变。在单轴拉伸载荷下,计算得到的杨氏模量随着纳米线中圆柱腔半径的增大而减小。为了了解空心硅纳米线的力学行为,研究了不同空腔体积分数下空心硅纳米线的结构演变。结果表明,当空腔体积大于50%时,纳米线的结构是完全非晶的。我们已经证明纳米线的结构变化是其机械行为变化的根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Molecular Dynamics Simulation of the Uniaxial Tensile Test of Hollow-Core Silicon Nanowires
In this paper, the mechanical behavior of silicon nanowires with the hollow-core geometry was investigated using molecular dynamics simulation. The pristine Si nanowires are considered as references to compare the mechanical properties of the hollow-core structures. Our results show that hollow-core silicon nanowires with a cavity volume fraction above 50% have a larger fracture strain compared to nanowires with a smaller cavity. Under uniaxial tensile loading, the computed Young’s modulus decreases as the radius of cylindrical cavity in nanowire increases. To understand the mechanical behavior of hollow-core Si nanowires, the structural evolution of the nanowire with different cavity volume fraction was investigated. It is established that the structure of nanowires with a cavity volume of more than 50% is completely amorphous. We have shown that structural changes in nanowires are the root cause of changes in their mechanical behavior.
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