用高质量因数谐振腔测量掺硅的近太赫兹电导率

2011 International Conference on Infrared, Millimeter, and Terahertz Waves Pub Date : 2011-12-15 DOI:10.1109/IRMMW-THZ.2011.6105218

M. Kirley, Benjamin B. Yang, K. Willis, Marcus J. Weber, N. Sule, S. Hagness, I. Knezevic, J. Booske

{"title":"用高质量因数谐振腔测量掺硅的近太赫兹电导率","authors":"M. Kirley, Benjamin B. Yang, K. Willis, Marcus J. Weber, N. Sule, S. Hagness, I. Knezevic, J. Booske","doi":"10.1109/IRMMW-THZ.2011.6105218","DOIUrl":null,"url":null,"abstract":"The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"35 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity\",\"authors\":\"M. Kirley, Benjamin B. Yang, K. Willis, Marcus J. Weber, N. Sule, S. Hagness, I. Knezevic, J. Booske\",\"doi\":\"10.1109/IRMMW-THZ.2011.6105218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.\",\"PeriodicalId\":6353,\"journal\":{\"name\":\"2011 International Conference on Infrared, Millimeter, and Terahertz Waves\",\"volume\":\"35 1\",\"pages\":\"1-1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Infrared, Millimeter, and Terahertz Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THZ.2011.6105218\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2011.6105218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在400 GHz和650 GHz下测量了掺杂硅的电导率。测量使用高质量因数，半共焦谐振腔。提出的数据与传统理论(德鲁德模型)相矛盾，与威斯康星大学麦迪逊分校正在开发的多物理场计算模型一致。

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Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity

The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.

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来源期刊

2011 International Conference on Infrared, Millimeter, and Terahertz Waves

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