等离子切割完全集成的工艺流程,适合BEOL先进的封装制造

F. Wei, T. Tabuchi, T. Lazerand, Christopher Johnston, K. Mackenzie, M. Notarianni
{"title":"等离子切割完全集成的工艺流程,适合BEOL先进的封装制造","authors":"F. Wei, T. Tabuchi, T. Lazerand, Christopher Johnston, K. Mackenzie, M. Notarianni","doi":"10.1109/ECTC.2017.269","DOIUrl":null,"url":null,"abstract":"Comprehensive investigations were conducted on identifying integration efforts needed to adapt plasma dicing technology in BEOL pre-production environments. First, the authors identified the suitable process flows. Within the process flow, laser grooving before plasma dicing was shown to be a key unit process to control resulting die sidewall quality. Significant improvement on laser grooving quality has been demonstrated. Through these efforts, extremely narrow kerfs and near ideal dies strengths were achieved on bare Si dies. Plasma dicing process generates fluorinated polymer residues on both Si die sidewalls and under the topography overhangs on wafer surfaces, such as under the solder balls or microbumps. Certain areas cannot be cleaned by in-chamber post-treatments. Multiple cleaning methods demonstrated process capability and compatibility to singulated dies-on-tape handling. Lastly, although many methods exist commercially for backmetal and DAF separations, the authors' investigation is still inconclusive on one preferred process for post-plasma dicing die separations.","PeriodicalId":6557,"journal":{"name":"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)","volume":"104 1","pages":"350-357"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Plasma Dicing Fully Integrated Process-Flows Suitable for BEOL Advanced Packaging Fabrications\",\"authors\":\"F. Wei, T. Tabuchi, T. Lazerand, Christopher Johnston, K. Mackenzie, M. Notarianni\",\"doi\":\"10.1109/ECTC.2017.269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Comprehensive investigations were conducted on identifying integration efforts needed to adapt plasma dicing technology in BEOL pre-production environments. First, the authors identified the suitable process flows. Within the process flow, laser grooving before plasma dicing was shown to be a key unit process to control resulting die sidewall quality. Significant improvement on laser grooving quality has been demonstrated. Through these efforts, extremely narrow kerfs and near ideal dies strengths were achieved on bare Si dies. Plasma dicing process generates fluorinated polymer residues on both Si die sidewalls and under the topography overhangs on wafer surfaces, such as under the solder balls or microbumps. Certain areas cannot be cleaned by in-chamber post-treatments. Multiple cleaning methods demonstrated process capability and compatibility to singulated dies-on-tape handling. Lastly, although many methods exist commercially for backmetal and DAF separations, the authors' investigation is still inconclusive on one preferred process for post-plasma dicing die separations.\",\"PeriodicalId\":6557,\"journal\":{\"name\":\"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"104 1\",\"pages\":\"350-357\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2017.269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 67th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2017.269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

为了确定在BEOL预生产环境中适应等离子切割技术所需的集成工作,进行了全面的调查。首先,作者确定了合适的流程流。在工艺流程中,等离子切割前的激光开槽是控制模具侧壁质量的关键工序。激光开槽质量得到了显著改善。通过这些努力,在裸硅模上实现了极窄的切口和接近理想的模具强度。等离子切割过程会在硅模侧壁和晶圆片表面的地形悬垂下(如焊料球或微凸起下)产生含氟聚合物残留物。某些区域无法通过室内后处理进行清洁。多种清洁方法展示了处理能力和兼容性,以单一的磁带上处理。最后,尽管有许多商业上的方法用于金属背景和DAF分离,但作者的研究仍然没有确定一种首选的等离子体后切割模具分离方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Plasma Dicing Fully Integrated Process-Flows Suitable for BEOL Advanced Packaging Fabrications
Comprehensive investigations were conducted on identifying integration efforts needed to adapt plasma dicing technology in BEOL pre-production environments. First, the authors identified the suitable process flows. Within the process flow, laser grooving before plasma dicing was shown to be a key unit process to control resulting die sidewall quality. Significant improvement on laser grooving quality has been demonstrated. Through these efforts, extremely narrow kerfs and near ideal dies strengths were achieved on bare Si dies. Plasma dicing process generates fluorinated polymer residues on both Si die sidewalls and under the topography overhangs on wafer surfaces, such as under the solder balls or microbumps. Certain areas cannot be cleaned by in-chamber post-treatments. Multiple cleaning methods demonstrated process capability and compatibility to singulated dies-on-tape handling. Lastly, although many methods exist commercially for backmetal and DAF separations, the authors' investigation is still inconclusive on one preferred process for post-plasma dicing die separations.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信