离子束加氢非晶硅的研究进展

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105670

Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua

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引用次数: 0

摘要

研究了用发光放电沉积的a-Si:H脱氢、480℃下发光放电沉积和射频磁控溅射沉积制备的太阳能电池用未掺杂非晶硅的离子束加氢。采用Kaufman离子源将氢原子引入到A - si:H中。高度感光的a-Si:H薄膜，高达20 at。得到了以一氢化物为主的氢键。作者报告了磁控溅射沉积非晶硅加氢前后的拉曼散射测量结果，离子束和射频加氢后技术的比较，以及离子束加氢技术的可能应用。

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Recent results on ion-beam hydrogenation of amorphous silicon

The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<>

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Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

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0.00%

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