G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambrine
{"title":"一种50 GHz带宽、40 gbit /s低噪声的变质GaAs HEMT分布式放大器","authors":"G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambrine","doi":"10.1109/MAPE.2005.1617838","DOIUrl":null,"url":null,"abstract":"An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s\",\"authors\":\"G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambrine\",\"doi\":\"10.1109/MAPE.2005.1617838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MAPE.2005.1617838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MAPE.2005.1617838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s
An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.
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