O. Sorokin, I. O. Belyachenkov, A. S. Chainikova, S. V. Zhitnyuk, P. Medvedev
{"title":"石墨负载反应键合碳化硅的结构与相组成","authors":"O. Sorokin, I. O. Belyachenkov, A. S. Chainikova, S. V. Zhitnyuk, P. Medvedev","doi":"10.22349/1994-6716-2022-111-3-49-58","DOIUrl":null,"url":null,"abstract":"The influence of porous SiC preforms densities for the siliconizing process on the structure and phase constitution of graphite-loaded reaction-bonded SiC (G-SiSiC) was studied. It was found that varying the densities of porous SiC preforms containing artificial graphite of similar grain size with the dimensions less than 25 mm (in height or diameter) can lead to the G-SiSiC samples with low free Si content (less 4 wt.%.). It was also shown that reaction sintering of G-SiSiC samples with the optimized densities during the siliconizing process results in the formation of a dense fine-grained SiC layer. Moreover, during the siliconizing process, a dense SiC gradient matrix is formed in which graphite and Si inclusions are uniformly dispersed in bulk.","PeriodicalId":23679,"journal":{"name":"Voprosy Materialovedeniya","volume":"129 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure and phase constitution of graphite-loaded reaction-bonded sic\",\"authors\":\"O. Sorokin, I. O. Belyachenkov, A. S. Chainikova, S. V. Zhitnyuk, P. Medvedev\",\"doi\":\"10.22349/1994-6716-2022-111-3-49-58\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of porous SiC preforms densities for the siliconizing process on the structure and phase constitution of graphite-loaded reaction-bonded SiC (G-SiSiC) was studied. It was found that varying the densities of porous SiC preforms containing artificial graphite of similar grain size with the dimensions less than 25 mm (in height or diameter) can lead to the G-SiSiC samples with low free Si content (less 4 wt.%.). It was also shown that reaction sintering of G-SiSiC samples with the optimized densities during the siliconizing process results in the formation of a dense fine-grained SiC layer. Moreover, during the siliconizing process, a dense SiC gradient matrix is formed in which graphite and Si inclusions are uniformly dispersed in bulk.\",\"PeriodicalId\":23679,\"journal\":{\"name\":\"Voprosy Materialovedeniya\",\"volume\":\"129 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Voprosy Materialovedeniya\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22349/1994-6716-2022-111-3-49-58\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Voprosy Materialovedeniya","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22349/1994-6716-2022-111-3-49-58","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structure and phase constitution of graphite-loaded reaction-bonded sic
The influence of porous SiC preforms densities for the siliconizing process on the structure and phase constitution of graphite-loaded reaction-bonded SiC (G-SiSiC) was studied. It was found that varying the densities of porous SiC preforms containing artificial graphite of similar grain size with the dimensions less than 25 mm (in height or diameter) can lead to the G-SiSiC samples with low free Si content (less 4 wt.%.). It was also shown that reaction sintering of G-SiSiC samples with the optimized densities during the siliconizing process results in the formation of a dense fine-grained SiC layer. Moreover, during the siliconizing process, a dense SiC gradient matrix is formed in which graphite and Si inclusions are uniformly dispersed in bulk.