锇双β衰变的新实验极限

P. Belli, R. Bernabei, F. Cappella, V. Caracciolo, R. Cerulli, F. Danevich, A. Incicchitti, D. Kasperovych, V. Kobychev, G. Kovtun, N. G. Kovtun, M. Laubenstein, V. Merlo, D. Poda, O. Polischuk, A. P. Shcherban, S. Tessalina, V. Tretyak
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引用次数: 4

摘要

在格兰萨索国家实验室(LNGS),用118g超纯锇样品安装在112 cm3超低本底宽能锗探测器的端盖上,对184o和1920 o的双β过程进行了15851小时的研究。在184o中,双电子捕获和正电子发射的电子捕获的新极限设定在lim T1/2 ~ 10^ 16-10 ^17年的水平上。特别是184o到184W基态的2ν2K和2νKL衰变分别限制为T1/2 > 3.0 × 10^16年和T1/2 > 2.0 × 10^16年。在90%的置信水平下,将192Os双β衰变到192Pt第一激发能级的半衰期下限设为lim T1/2 = 2.0 × 10^20年
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New experimental limits on double-beta decay of osmium
Double-beta processes in 184Os and 192Os were searched for over 15 851 h at the Gran Sasso National Laboratory (LNGS) of the I.N.F.N. by using a 118 g ultra-pure osmium sample installed on the endcap of a 112 cm3 ultra-low- background broad-energy germanium detector. New limits on double-electron capture and electron capture with positron emission in 184Os were set at the level of lim T1/2 ∼ 10^16–10^17 years. In particular the 2ν2K and 2νKL decays of 184Os to the ground state of 184W are restricted as T1/2 > 3.0 × 10^16 years and T1/2 > 2.0 × 10^16 years, respectively. A lower limit on the half-life for the double-beta decay of 192Os to the first excited level of 192Pt was set as lim T1/2 = 2.0 × 10^20 years at 90% confidence level
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