{"title":"用于简单制造工艺的多比特机电存储单元","authors":"Kwangseok Lee, W. Choi","doi":"10.1109/SNW.2010.5562579","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a novel electromechanical memory cell (T cell). The T cell has been demonstrated successfully by the experimental results of its prototype cell. Also, the operation of a unit cell and that of array have been investigated. The T cell is superior to the previously reported H cell in terms of fabrication process complexity since the T cell needs only two metal layers.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"22 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Multi-bit electromechanical memory cell for simple fabrication process\",\"authors\":\"Kwangseok Lee, W. Choi\",\"doi\":\"10.1109/SNW.2010.5562579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a novel electromechanical memory cell (T cell). The T cell has been demonstrated successfully by the experimental results of its prototype cell. Also, the operation of a unit cell and that of array have been investigated. The T cell is superior to the previously reported H cell in terms of fabrication process complexity since the T cell needs only two metal layers.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":\"22 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-bit electromechanical memory cell for simple fabrication process
In this paper, we propose a novel electromechanical memory cell (T cell). The T cell has been demonstrated successfully by the experimental results of its prototype cell. Also, the operation of a unit cell and that of array have been investigated. The T cell is superior to the previously reported H cell in terms of fabrication process complexity since the T cell needs only two metal layers.