基于腔辅助全光增益的单光子探测

C. Panuski, M. Pant, M. Heuck, D. Englund
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引用次数: 3

摘要

考虑单光激电荷载流子对极限下的自由载流子色散效应,提出了通过高q /V半导体腔实现单光子探测的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-Photon Detection by Cavity-Assisted All-Optical Gain
Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.
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