脉冲激光退火CuInSe2薄膜的点缺陷研究

A. Bhatia, H. Meadows, M. C. Hymas, E. Smith, P. Dale, M. Scarpulla
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引用次数: 2

摘要

对Cu(In,Ga)Se2薄膜进行脉冲激光退火(PLA)可以改善其光电性能。在这里,我们研究了ns PLA对电沉积和Se炉退火制备的CuInSe2薄膜中陷阱特性的影响。拉曼光谱表明,聚乳酸后A1声子峰宽度减小,压缩应变松弛。电流-电压测量表明,用激光辐照薄膜制成的异质结二极管电池的理想因数有所提高。肖特基二极管和完整太阳能电池的缺陷光谱显示,在≈200 meV下,EDA_ref样品存在相似的缺陷水平。然而,对于在30 mJ/cm2下处理的样品,我们发现肖特基二极管在≈300 meV处有一个深阱,而完整的太阳能电池在≈60 meV处有一个深阱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of point defects in ns pulsed-laser annealed CuInSe2 thin films
Pulsed-laser annealing (PLA) of Cu(In,Ga)Se2 thin films has been shown to improve their optoelectronic properties. Here we investigate the effects of ns PLA on the identity of traps in CuInSe2 films prepared by electrodeposition followed by furnace annealing with Se. Raman spectroscopy indicates a decrease in width of the A1 phonon peak and relaxation of compressive strain after PLA. Current-voltage measurements indicate improvement in ideality factor of heterojunction diode cells built from laser irradiated films. Defect spectroscopy on Schottky diode and complete solar cell reveal similar defect level for EDA_ref sample present at ≈ 200 meV. However for the sample processed at 30 mJ/cm2 we find a deep trap at ≈ 300 meV in case of Schottky diodes, whereas complete solar cells show a trap at ≈ 60 meV.
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