应变影响下GaSb晶须的弱局部化

2019 International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo) Pub Date : 2019-09-01 DOI:10.1109/UkrMiCo47782.2019.9165495

A. Druzhinin, Y. Khoverko, I. Ostrovskii, N. Liakh-Kaguy

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引用次数: 0

摘要

本文研究了低温4.2 ~ 60k时n型GaSb晶须磁电阻的应变影响，在4.2 K的压缩应变下，晶须磁电阻发生从WAL到WL的交叉，利用晶须磁电阻的场依赖性设计了1 ~ 11t范围内的磁场感应传感器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Weak Localization in GaSb Whiskers under Strain Influence

The article deals with the studies of strain influence of n-type GaSb whiskers magnetoresistance at low temperatures 4.2 – 60 K The crossover from WAL to WL occurs under the compressive strain at 4.2 K The field dependency of the whiskers magnetoresistance was used for design of sensor of magnetic field induction in the range 1-11 T.

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来源期刊

2019 International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo)

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