n面朝上薄膜砷化镓太阳能电池纳米棒阵列的数值评价

R. S. Davidsen, P. T. Tang, I. Mizushima, Sune Thorsteinsson, P. Poulsen, Jesper Frausig, Ørnulf Nordseth, O. Hansen
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引用次数: 1

摘要

我们提出了黑硅纹理和黑化母线串的组合,作为获得全黑太阳能电池板的潜在方法,同时使用传统的前接触太阳能电池。黑硅是通过无掩膜反应离子蚀刻实现的,在156×156 mm2硅片上的总平均反射率低于0.5%。在反射率方面比较了四种不同的获得黑化母线串的方法,并使用其中两种方法(即氧化铜和蚀刻焊料)来制造功能性全黑太阳能9电池板。黑色母线(例如,由氧化铜制成)在整个可见波长范围内的反射率低于3%。黑色硅电池和黑色母线的组合产生了美观的全黑面板,基于传统的前接触太阳能电池,而不影响效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical Evaluation on the Nano-rod Array on a N-side-up Thin-film GaAs Solar Cells
We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance below 0.5% across a 156×156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional all-black solar 9-cell panels. The black bus-bars (e.g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency.
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