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引用次数: 0
摘要
本文讨论了化合物As x Se 100-x中砷含量变化的一些理论问题。我们还讨论了所研究体系的XRD和光学分析。对As x Se 100- x(5≤x≤50)成分的XRD分析强调了制备合金的非晶结构和蒸发薄膜。在As x Se 100-x的化合物中，刚性渗透阈值(RPT)发生在As = 40 at.%。利用记录的透射率(T)和反射率(R)在350 ~ 2500范围内对蒸发后的As-Se薄膜进行了光学研究
Studies on the structural and optical properties of AsxSe100-x thin films
Through this paper we discussed some theoretical aspects related to the change in arsinic content in the compound As x Se 100-x . We also presented a discussion on the XRD and optical analyses of the investigated system. The XRD analysis of As x Se 100- x (5 ≤ x ≤ 50) compositions emphases the non crystalline structure of the prepared alloys as well as the evaporated thin films. In the present compound of As x Se 100-x , the rigidity percolation threshold (RPT) occurs at As = 40 at.%. Optical investigations of the evaporated As-Se films were done using the recorded data of transmittance (T) and reflectance (R) in the range 350–2500
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