模拟场效应晶体管双极石墨烯纳米带

S. Masoumi , H. Hajghasem , A. Erfanian , A. Molaei Rad
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引用次数: 5

摘要

本文的目的是利用软件包ATK-SE包,结合虚拟纳米实验室(VNL),可以用来研究纳米级晶体管。对于晶体管结构,我们将使用石墨烯结器件,其中ATK用于研究类似系统的特性。考察了各种参数对石墨烯纳米带结构的影响。它由3个区域组成,形成金属-半导体-金属结。通过在中心区域施加一个门电位,系统可以作为场效应晶体管,它能够计算特性,透射谱,温度相关电导,电导和电流作为门电位和温度的函数。因此,在本文中,器件的设计和仿真参数与性能的提高有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation Field Effect Transistor Bipolar Graphene Nano-ribbon

The purpose of this paper is to use software package ATK-SE package, in combination with virtual Nano-Lab (VNL), can be used to investigate a Nano-scale transistor. For the transistor structure we will use a graphene junction device, where ATK is used to investigate the properties of a similar system. The effect of various parameters on the structure of graphene Nano-ribbon checked. It consists of 3 regions and forms a metal-semiconductor-metal junction. By applying a gate potential to the central region, the system can function as a field effect transistor, which is able to calculate properties, Transmission spectrum, Temperature dependent conductance, Conductance and Current as function of gate potential and temperature. So in this paper, the device design and simulation parameters are associated with improved performance.

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