{"title":"5G大规模MIMO基站SiO2 MOSFET吸收器参数分析","authors":"Elliot O. Omoru, V. Srivastava","doi":"10.4028/p-xbmtx2","DOIUrl":null,"url":null,"abstract":"The performance of the SiO2 MOSFET-based absorber as a solution to arching within transmission lines (used for RF signal transportation) has been realized and analyzed at 28 GHz using the reflected signal from the RX branch of 5G massive MIMO base station. The reflected signal from the receiver (RX) branch of base stations may lead to interference, thus creating a performance reducing condition (arching) within the transmission lines. For optimum performance in the 5G regime, the SiO2 MOSFET has been used to solve the problem of arching within the transmission line under large field intensities of a standing wave resulting from the impedance. The SiO2 MOSFET-based absorber has been observed for a reflectivity of -79.5 dB and a rectification efficiency greater than 17 %","PeriodicalId":34329,"journal":{"name":"Journal of Electrical and Computer Engineering Innovations","volume":"18 1","pages":"41 - 46"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Parametric Analysis of SiO2 MOSFET Based Absorber for 5G Massive MIMO Base Station\",\"authors\":\"Elliot O. Omoru, V. Srivastava\",\"doi\":\"10.4028/p-xbmtx2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of the SiO2 MOSFET-based absorber as a solution to arching within transmission lines (used for RF signal transportation) has been realized and analyzed at 28 GHz using the reflected signal from the RX branch of 5G massive MIMO base station. The reflected signal from the receiver (RX) branch of base stations may lead to interference, thus creating a performance reducing condition (arching) within the transmission lines. For optimum performance in the 5G regime, the SiO2 MOSFET has been used to solve the problem of arching within the transmission line under large field intensities of a standing wave resulting from the impedance. The SiO2 MOSFET-based absorber has been observed for a reflectivity of -79.5 dB and a rectification efficiency greater than 17 %\",\"PeriodicalId\":34329,\"journal\":{\"name\":\"Journal of Electrical and Computer Engineering Innovations\",\"volume\":\"18 1\",\"pages\":\"41 - 46\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electrical and Computer Engineering Innovations\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4028/p-xbmtx2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electrical and Computer Engineering Innovations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4028/p-xbmtx2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Parametric Analysis of SiO2 MOSFET Based Absorber for 5G Massive MIMO Base Station
The performance of the SiO2 MOSFET-based absorber as a solution to arching within transmission lines (used for RF signal transportation) has been realized and analyzed at 28 GHz using the reflected signal from the RX branch of 5G massive MIMO base station. The reflected signal from the receiver (RX) branch of base stations may lead to interference, thus creating a performance reducing condition (arching) within the transmission lines. For optimum performance in the 5G regime, the SiO2 MOSFET has been used to solve the problem of arching within the transmission line under large field intensities of a standing wave resulting from the impedance. The SiO2 MOSFET-based absorber has been observed for a reflectivity of -79.5 dB and a rectification efficiency greater than 17 %
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