{"title":"25.3 GHz, 4.1 mW VCO，使用开关基板屏蔽电感器，调谐范围34.8%","authors":"Pawan Agarwal, P. Pande, D. Heo","doi":"10.1109/MWSYM.2015.7166890","DOIUrl":null,"url":null,"abstract":"A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"25.3 GHz, 4.1 mW VCO with 34.8% tuning range using a switched substrate-shield inductor\",\"authors\":\"Pawan Agarwal, P. Pande, D. Heo\",\"doi\":\"10.1109/MWSYM.2015.7166890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.\",\"PeriodicalId\":6493,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Symposium\",\"volume\":\"18 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2015.7166890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7166890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
25.3 GHz, 4.1 mW VCO with 34.8% tuning range using a switched substrate-shield inductor
A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.
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