Ag-Cu-Ge非晶合金体系中玻尔兹曼型普通输运与量子修正的相互作用。电阻率的温度依赖性

U. Mizutani, K. Sato, I. Sakamoto, K. Yonemitsu
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引用次数: 16

摘要

在2-300 K的温度范围内测量了(Ag0.5Cu0.5)1-xGex非晶合金在0<或=x<或=0.95的宽成分范围内的电阻率。分析了金属区的散射机制,假设散射持续至60 at。% Ge合金或电阻率低于约1000 μ ω cm。在约200 μ ω cm以下的低电阻率区,rho -T特性可以用基于玻尔兹曼方程或广义费伯-齐曼理论的普通散射机制一致地解释。在200 μ ω cm以上的高电阻率区,量子修正发挥了重要作用:15k以下和30k以上的rho -T特性主要是由电子-电子和电子-声子相互作用引起的。通过研究维数对rho -T特性的影响,也证实了量子修正的主导作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interplay of the Boltzmann-type ordinary transport and quantum corrections in Ag-Cu-Ge amorphous alloy system. I. Temperature dependence of electrical resistivity
The electrical resistivity has been measured in the temperature range 2-300 K for (Ag0.5Cu0.5)1-xGex amorphous alloys over a wide composition range 0
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